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PD - 95034A
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on)
l l l
IRFR3704PBF IRFU3704PbF
HEXFET(R) Power MOSFET
VDSS
20V
RDS(on) max
9.5m
ID
75A
Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3704 I-Pak IRFU3704
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TA = 70C TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max
20 20 75 63 300 90 62 0.58 -55 to +175
Units
V
c
f f
A
Maximum Power Dissipation Maximum Power Dissipation
e e
W W/C C
Linear Derating Factor Junction and Storage Temperature Range
Thermal Resistance
Symbol
RJC RJA RJA
Parameter
Junction-to-Case
g
Typ
--- --- ---
Max
1.7 50 110
Units
C/W
Junction-to-Ambient (PCB Mount) *g Junction-to-Ambient
g
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes
through are on page 9
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1
12/13/04
IRFR/U3704PbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V (BR)DSS V(BR)DSS/TJ RDS(on) V GS(th) IDSS IGSS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min
20 --- --- --- 1.0 --- --- --- ---
Typ
--- 0.021 7.3 11 --- --- --- --- ---
Max Units
--- --- 9.5 14 3.0 10 100 200 -200
Conditions
V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m V A nA V GS = 10V, ID = 15A V GS = 4.5V, ID = 12A
e e
V DS = VGS, ID = 250A V DS = 20V, VGS = 0V V DS = 16V, VGS = 0V, TJ = 125C V GS = 16V V GS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd QOSS RG td(on) tr td(off) tf Ciss Coss Crss
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min
42 --- --- --- --- 0.3 --- --- --- --- --- --- ---
Typ
--- 19 8.1 6.4 16 --- 8.4 98 12 5.0 1996 1085 155
Max Units
--- --- --- --- 24 3.2 --- --- --- --- --- --- --- ns S nC
Conditions
V DS = 25V, ID = 57A ID = 28.4A V DS = 10V V GS = 4.5V V GS = 0V, VDS = 10V
e
V DD = 10V ID = 28.4A RG = 1.8 V GS = 4.5V V GS = 0V V DS = 10V = 1.0MHz
e
pF
Avalanche Characteristics
Symbol
E AS IAR
Parameter
Single Pulse Avalanche Energyd Avalanche CurrentA
Typ
--- ---
Max
216 71
Units
mJ A
Diode Characteristics
Symbol
IS ISM V SD trr Qrr trr Qrr
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge
Min
--- --- --- --- --- --- --- ---
Typ
--- --- 0.88 0.82 38 45 41 50
Max Units
75
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 35.5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, V R = 20V di/dt = 100A/s
f
A V ns nC ns nC
300 1.3 --- 57 68 62 75
e e
e e
TJ = 125C, IF = 35.5A, VR= 20V di/dt = 100A/s
2
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IRFR/U3704PbF
1000
VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V
1000
VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
3.5V
10
3.5V
10
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100
1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 175 C
100
1.5
1.0
0.5
10 3.0
V DS = 15V 20s PULSE WIDTH 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U3704PbF
3000
2500
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = 28.4A
VDS = 10V
8
C, Capacitance (pF)
2000
Ciss
6
1500
Coss
1000
4
500
2
Crss
0 1 10 100
0 0 10 20 30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
TJ = 175 C
I D , Drain Current (A)
100
100 100us
10
TJ = 25 C
1ms 10 10ms
1
0.1 0.2
V GS = 0 V
0.5 0.8 1.1 1.4 1.7 2.0
1 0.1
TC = 25 C TJ = 175 C Single Pulse
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U3704PbF
80
VDS
LIMITED BY PACKAGE
RD
VGS RG 10V
D.U.T.
+
ID , Drain Current (A)
60
-VDD
40
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFR/U3704PbF
RDS ( on ) , Drain-to-Source On Resistance ( )
RDS(on) , Drain-to -Source On Resistance ( )
0.020
0.010
VGS = 4.5V 0.015
0.009
0.008
ID = 35.5A
0.010 VGS = 10V
0.007
0.005 0 50 100 150 200 250 300 ID , Drain Current ( A )
0.006 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
Charge
IG ID
500
ID 11.6A 23.8A BOTTOM 28.4A TOP
Current Sampling Resistors
400
Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms
300
200
15V
V(BR)DSS tp
VDS L
100
DRIVER
RG
20V
D.U.T
IAS
+ - VDD
0 25 50 75 100 125 150 175
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRFR/U3704PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASSEMBLY LINE "A" Note: "P" in as sembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECT IFIER LOGO
IRFU120 12 916A 34
ASSEMBLY LOT CODE
DATE CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INTERNATIONAL RECTIFIER LOGO
IRFU120 12 34
DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY SITE CODE
ASSEMBLY LOT CODE
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IRFR/U3704PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120 WITH ASS EMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRFU120 919A 56 78
ASS EMBLY LOT CODE
DATE CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRF U120 56 78
AS SEMBLY LOT CODE
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMB LY SIT E CODE
8
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IRFR/U3704PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
Starting TJ = 25C, L = 0.5 mH
RG = 25, IAS = 28.4 A.
R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
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